TC1101 Selling Leads, Price trend, TC1101 DataSheet download, circuit diagram from SeekIC.com

Features: • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz• High Associated Gain: Ga = 12 dB Typical at 12 GHz• High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz• Breakdown Voltage: BVDGO 9 V• Lg = 0.25 m, Wg = 160 m• All-Gold Metallization for...

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SeekIC No. : 004512989 Detail

TC1101: Features: • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz• High Associated Gain: Ga = 12 dB Typical at 12 GHz• High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz&#...

TC1101 Data Sheet

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Part Number:: TC1101
Supply Ability:: 5000

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Features: • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz• High Associated Gain: Ga ...

Product Details

Description

Features:

• Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
• High Associated Gain: Ga = 12 dB Typical at 12 GHz
• High Dynamic Range: 1 dB Compression Power P_-1 = 18 dBm at 12 GHz
• Breakdown Voltage: BV_DGO 9 V
• Lg = 0.25 m, Wg = 160 m
• All-Gold Metallization for High Reliability
• 100 % DC Tested

Specifications

Symbol	Parameter	Rating
V_DS	Drain-Source Voltage	7.0 V
V_GS	Gate-Source Voltage	-3.0 V
I_DS	Drain Current	I_DSS
I_GS	Gate Current	160 A
P_in	RF Input Power, CW	14 dBm
P_T	Continuous Dissipation	150 mW
T_CH	Channel Temperature	175
T_STG	Storage Temperature	- 65 to +175

Description

The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

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TC1101

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