TC2201

Features:

• 1.5 dB Typical Noise Figure at 12 GHz
• High Associated Gain: Ga = 7 dB Typical at 12 GHz
• 21.5 dBm Typical Power at 12 GHz
• 8 dB Typical Linear Power Gain at 12 GHz
• Lg = 0.25 µm, Wg = 300 µm
• 100 % DC Tested
• Low Cost Plastic Micro-X Package


Specifications

Symbol	Parameter	Rating
VDS	Drain-Source Voltage	7.0 V
VGS	Gate-Source Voltage	-3.0 V
IDS	Drain Current	IDSS
IGS	Gate Current	300 µA
Pin	RF Input Power, CW	17 dBm
PT	Continuous Dissipation	400 mW
TCH	Channel Temperature	175
TSTG	Storage Temperature	- 65 to +175

* For the tight control of the pinch-off voltage range, we divide TC2201 into 3 model numbers to
   fit customer design requirement (1)TC2201P0710 : V_p = -0.7V to -1.0V (2)TC2201P0811 : V_p = -0.8V
   to -1.1V (3)TC2201P0912 : V_p = -0.9V to -1.2V If required, customer can specify the requirement in
   purchasing document. For special V_p requirement, please contact factory for details.


Description

The TC2201 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.