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TC2997D

Features: • 20W Typical Power at 2.45 GHz• 10dB Typical Linear Power Gain at 2.45 GHz• High Linearity: IP3 = 52 dBm Typical• High Power Added Efficiency: Nominal PAE of 40 %• Suitable for High Reliability Application• Wg = 50 mm• 100 % DC and RF TestedR...

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SeekIC No. : 004513542 Detail

TC2997D: Features: • 20W Typical Power at 2.45 GHz• 10dB Typical Linear Power Gain at 2.45 GHz• High Linearity: IP3 = 52 dBm Typical• High Power Added Efficiency: Nominal PAE of 40 %&...

TC2997D Data Sheet

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Part Number:
TC2997D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 20W Typical Power at 2.45 GHz
• 10dB Typical Linear Power Gain at 2.45 GHz
• High Linearity: IP3 = 52 dBm Typical
• High Power Added Efficiency: Nominal PAE of 40 %
• Suitable for High Reliability Application
• Wg = 50 mm
• 100 % DC and RF Tested
• Flange Ceramic Package


Specifications

Symbol
Parameter
Rating
VDS
Drain-Source Voltage
12 V
VGS
Gate-Source Voltage
-5 V
IDS
Drain Current
IDSS
Pin
RF Input Power, CW
37 dBm
PT
Continuous Dissipation
100 W
Tch
Channel Temperature
175
Tstg
Storage Temperature
- 65 to +175



Description

The TC2997D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial applications.




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