Features: ` 37dBm Typical Power at 5.0 GHz ` High Associated Gain: Ga = 9 dB Typical at 5.0 GHz` High Efficiency: Efficiency 40 % for Class AB Operation` Suitable for High Reliability Application` Wg = 12 mm` 100 % DC and RF Tested` Flange Ceramic PackageSpecifications Symbol Parameter R...
TC3989A: Features: ` 37dBm Typical Power at 5.0 GHz ` High Associated Gain: Ga = 9 dB Typical at 5.0 GHz` High Efficiency: Efficiency 40 % for Class AB Operation` Suitable for High Reliability Application` ...
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| Symbol | Parameter | Rating |
| VDS | Drain-Source Voltage | 14 V |
| VGS | Gate-Source Voltage | -5 V |
| ID | Drain Current | 3 A |
| PT | Continuous Dissipation | 12 W |
| Pin | Input Power, CW | 33 dBm |
| TCH | Channel Temperature | 175 °C |
| TSTG | Storage Temperature | - 65 °C to +175 °C |
The TC3989A is a 37dBm partially prematched power FET assembled in a flange ceramic package. It requires simple matching networks to achieve high gain and high linearity for 5.0 GHz applications. All devices are 100 % DC and RF tested to assure consistent quality.