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TC4535

Features: • P-1 dB: 30 dBm• Small Signal Gain: 30 dB• IP3: 39 dBm• Match to 50 Operation• Bias condition:750 mA @ 8 VApplication• Ku Band VSAT Transmit SubsystemSpecifications Symbol Parameter/Conditions Min. Max. Units VDD Drain-Source Voltage ...

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SeekIC No. : 004513782 Detail

TC4535: Features: • P-1 dB: 30 dBm• Small Signal Gain: 30 dB• IP3: 39 dBm• Match to 50 Operation• Bias condition:750 mA @ 8 VApplication• Ku Band VSAT Transmit Subsystem...

TC4535 Data Sheet

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Part Number:
TC4535
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/7

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Product Details

Description



Features:

• P-1 dB: 30 dBm
• Small Signal Gain: 30 dB
• IP3: 39 dBm
• Match to 50 Operation
• Bias condition:750 mA @ 8 V


Application

• Ku Band VSAT Transmit Subsystem


Specifications

Symbol Parameter/Conditions Min. Max. Units
VDD Drain-Source Voltage   10 Volts
IDD Total Drain Current   1600 mA
Pin RF Input Power   10 dBm
Pt Power Dissipation   12 W
Tch Operating Channel Temperature   175
Tstg Storage Temperature -65 175
Note:
1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
2. Specifications subject to change without notice.


Description

The TC4535 is a 4 stage PHEMT MMIC power amplifier. It is designed for use in low cost, high volume, Ku band applications. The MMIC is matched to 50ohm operation. No external matching component is required. It provides a typical gain of 30 dB and P1 dB power of more than 29 dBm. Typical bias condition of TC4535 is 8V at 750 mA. The MMIC is a packaged in a copper based ceramic 6 pins power package. The copper based carrier of the package allows direct soldering of the device to the PCB for proper heat sinking.




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