Features: OrganizationMemory cell allay 528 *128K* 8 Register 528 * 8 Page size 528 bytes Block size (16K 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase Mode control Serial input/output Command control Power supply VCC 2.7 V...
TC58DVM92A1FTI0: Features: OrganizationMemory cell allay 528 *128K* 8 Register 528 * 8 Page size 528 bytes Block size (16K 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Bloc...
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Features: • Organization Memory cell allay 528 * 32K * 8 Register 528 * 8 Page size 528 byte...

| SYMBOL | RATING | VALUE | Unit |
| VCC | Power Supply Voltage | -0.6 to 4.6 | V |
| VIN | Input Voltage | -0.6 to 4.6 | V |
| VI/O | Input/Output Voltage | -0.6 V to VCC 0.3 V (d 4.6 V) | V |
| PD | Power Dissipation | 0.3 | W |
| Tsolder | Soldering Temperature (10s) | 260 | °C |
| Tstg | Storage Temperature | -55 to 150 | °C |
| Topr | Operating Temperature | -40 to 85 | °C | <
The TC58DVM92A1FTI0 is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation of TC58DVM92A1FTI0 is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes u 32 pages).
The TC58DVM92A1FTI0 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the TC58DVM92A1FTI0 most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.