TC58DVM92A1FTI0

Features: OrganizationMemory cell allay 528 *128K* 8 Register 528 * 8 Page size 528 bytes Block size (16K  512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase Mode control Serial input/output Command control Power supply VCC 2.7 V...

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SeekIC No. : 004514189 Detail

TC58DVM92A1FTI0: Features: OrganizationMemory cell allay 528 *128K* 8 Register 528 * 8 Page size 528 bytes Block size (16K  512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Bloc...

floor Price/Ceiling Price

Part Number:
TC58DVM92A1FTI0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/13

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Product Details

Description



Features:

 Organization
Memory cell allay         528 *128K * 8
Register                      528 * 8
Page size                    528 bytes
Block size                    (16K  512) bytes 
Modes
Read, Reset, Auto Page Program,
Auto Block Erase, Status Read,  
Multi Block Program, Multi Block Erase 
  Mode control
Serial input/output
Command control 
  Power supply                VCC   2.7 V to 3.6 V 
  Program/Erase Cycles  1E5 cycle (with ECC) 
  Access time
Cell array to register      25 s max
Serial Read Cycle            50ns min 
  Operating current
Read (50 ns cycle)         10 mA typ.
Program (avg.)              10 mA typ.
Erase (avg.)                  10 mA typ.
Standby                        50 A max. 
  Package
TSOPI48-P-1220-0.50 (Weight: 0.53g typ.)



Pinout

  Connection Diagram


Specifications

<
SYMBOL RATING VALUE Unit
VCC Power Supply Voltage -0.6 to 4.6 V
VIN Input Voltage -0.6 to 4.6 V
VI/O Input/Output Voltage -0.6 V to VCC  0.3 V (d 4.6 V) V
PD Power Dissipation 0.3 W
Tsolder Soldering Temperature (10s) 260 °C
Tstg Storage Temperature -55 to 150 °C
Topr Operating Temperature -40 to 85 °C



Description

The TC58DVM92A1FTI0 is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only  Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 blocks. The device has a 528-byte static register  which allows program and read data to be transferred between the register and the memory cell array in 528-byte  increments. The Erase operation of TC58DVM92A1FTI0 is implemented in a single block unit (16 Kbytes  512 bytes: 528 bytes u 32 pages).  

The TC58DVM92A1FTI0 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as  well as for command inputs. The Erase and Program operations are automatically executed making the TC58DVM92A1FTI0 most  suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and  other systems which require high-density non-volatile memory data storage.




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