TC7SB66FU

Features:

•  Operating voltage: V_CC = 2~5.5 V
•  High speed operation: tpd = 0.25 ns (max)
•  Ultra-low on resistance: RON = 5 Ω (typ.)
•  Electro-static discharge (ESD) performance: ±200 V or more (JEITA) 
    ±2000 V or more (MIL)
•  High noise margin: V_NIL = V_NIH = 28% VCC (min)
•  Power-down protection for inputs (control inputs only)
•  Package: USV 
 


Pinout

Inputs	Function
OE
H	A port = B port
L	Disconnect

Specifications

Characteristics		Symbol	Rating	Unit
Power supply voltage		VCC	−0.5~7.0	V
Control pin input voltage		VIN	−0.5~7.0	V
Switch terminal I/O voltage		VS	−0.5~VCC+0.5	V
Clump diode current	Control input pin	IIK	−50	mA
	Switch terminal		±50
Switch I/O current		IS	128	mA
Power dissipation		PD	200	mW
DC VCC/GND current		ICC/IGND	±100	mA
Storage temperature		Tstg	−65~150	°C

 


Description

The TC7SB66FU is a low on-resistance, high-speed CMOS 1-bit bus switch. This bus switch allows the connections or  disconnections to be made with minimal propagation delay while maintaining Low power dissipation which is the feature of CMOS. 

When output enable (OE) of TC7SB66FU is at High level, the switch is on; when at Low level, the switch is off.

P-MOS and N-MOS channel block means the device is suitable for analog signal transmission.

All inputs of TC7SB66FU are equipped with protector circuits to protect the device from static discharge