TCDT1110G

Current Transfer Ratio :
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Packaging : Tube
Maximum Operating Temperature : + 100 C
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Collector Current : 50 mA
Maximum Power Dissipation : 250 mW
Input Type : DC
Isolation Voltage : 5300 Vrms
Package / Case : PDIP-6
Maximum Collector Emitter Voltage : 70 V


Features:

• Extra low coupling capacity - typical 0.2 pF
• High Common Mode Rejection
• Low temperature coefficient of CTR
• Base not connected
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC




Application

• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
- For appl. class I - IV at mains voltage 300 V
- For appl. class I - III at mains voltage 600 V
according DIN EN 60747-5-5.




Pinout






Specifications

PARAMETER	TEST CONDITION	SYMBOL	VALUE	UNIT
INPUT
Reverse voltage		VR	6	V
Forward current		IF	60	mA
Forward surge current	tp/T 10 s	IFSM	3	mW
Power dissipation		Pdiss	100
Junction temperature		Tj	125

Description

The TCDT1110/TCDT1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic dual inline package.

The elements of TCDT1110/TCDT1110G provide a fixed distance between input and output for highest safety requirements.