Isolation Voltage
: 5000 Vrms
Packaging
: Tube
Maximum Operating Temperature
: + 100 C
Minimum Operating Temperature
: - 40 C
Input Type
: AC
Maximum Collector Emitter Saturation Voltage
: 0.3 V
Maximum Forward Diode Voltage
: 1.6 V
Maximum Collector Current
: 50 mA
Maximum Power Dissipation
: 250 mW
Package / Case
: PDIP-4
Maximum Collector Emitter Voltage
: 70 V
Current Transfer Ratio
: 300 %
Features: Approvals:
`BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
`FIMKO (SETI): EN 60950, Certificate number 11027
`Underwriters Laboratory (UL) 1577 recognized, file number E-76222 Double Protection
`CSA (CUL) 1577recognized, file number E-76222 Double Protection
`VDE 0884, Certificate number 115667 VDE 0884 related features:
`Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak
`Isolation test voltage (partical discharge test voltage) Vpd = 1.6 kV peak
`Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
`Rated recurring peak voltage (repetitive) VIORM = 600 VRMS
`Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI . 175
`Thickness though insulation . 0.75 mm
`Internal creepage distance > 4 mm General features:
`Isolation materials according to UL94-VO
`Pollution degree 2 (DIN/VDE 0110 /resp. IEC 664)
`Climatic classification 55/100/21 (IEC 68 part 1)
`Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection
`Low temperature coefficient of CTR
`G = Leadform 10.16 mm; provides creepage distance > 8 mm, for TCET2600/ TCET4600 optional; suffix letter 'G' is not marked on the optocoupler
`Coupling System UApplicationCircuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
`For appl. class I IV at mains voltage 300 V
`For appl. class I III at mains voltage 600 V
according to VDE 0884, table 2, suitable for: Computer peripheral interface, microprocessor system interface, telecom equipment.Specifications
| Parameter |
TestConditions |
Symbol |
Value |
Unit |
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature |
tp 10 s
Tamb 25 |
VR
IF
IFSM
PV
Tj |
6
60
1.5
100
125 |
V
mA
A
mW
|
DescriptionThe TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in a 4-lead up to 16-lead plastic dual inline package.
The elements of TCET1600/ TCET2600/ TCET4600 are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
TCET1600 Data Sheet
