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Part Number: TCS1200

 

 

 

 

Description: The TCS1200 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 ...


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TCS1200 General Description


The TCS1200 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for TCAS applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.

TCS1200 Maximum Ratings

Maximum Power Dissipation
Device Dissipation @ 251.......... 2095 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) ........65 V
Emitter to Base Voltage (BVebo)........ 3.5 V
Collector Current (Ic).............. 60 A
Maximum Temperatures
Storage Temperature ........-65 to +200
Operating Junction Temperature +200

TCS1200 datasheet

TCS230
PDF/DataSheet Download

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