TCS450

Maximum Power Dissipation @ 25^{2 ..............................}1166 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage...................................55 Volts
BVebo Emitter to Base Voltage......................................3.5 Volts
Ic Collector Current ................................................40 Amps
Maximum Temperatures
Storage Temperature ......................................................- 65 to + 200
Operating Junction Temperature...................................... +200

GENERAL DESCRIPTION
The TCS450 s a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz, with the pulse width and duty required for TCAS applications. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input prematch for broadband capaility. Low thermal resistance package reduces junction temperature, extends life.