TD20

The TD20 is designed as powerex silicon controlled rectifier (SCR) which is for phase control applications. These are all-diffused, press-pak (pow-R-disc) devices employing the field-proven amplifying gate.

TD20 has five features. (1)Low on-state voltage. (2)High di/dt. (3)High dv/dt. (4)hermetic packaging. (5)Excellent surge and I2t ratings. Those are all the main features.

Some absolute maximum ratings TD20 have been concluded into several points as follow. (1)Its maximum blocking voltage would be 4500V. (2)Its RMS on-state current would be 4400A. (3)Its average on-state current would be 2800A. (4)Its peak one-cycle surge (non repetitive) on-state current (60Hz) would be 45800A. (5)Its peak one-cycle surge (non repetitive) on-state current (50Hz) would be 42000A. (6)Its critical rate-of-rise  of one-state current (repetitive) would be 170A/us. (7)Its I2t (for fusing), one cycle at 60Hz would be 8.6x10^6 A2s. (8)Its peak gate power dissipation would be 250W. (9)Its average gate power dissipation would be 35W. (10)Its storage temperature range TD20 would be from -40°C to 125°C. (11)Its operating temperature range would be from -40°C to 125°C. (12)Its mounting force would be 72 to 88kN. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to TD20.

Also some electrical characteristics TD20 are concluded as follow. (1)Its peak on-state voltage would be 1.9V. (2)Its forward leakage peak would be 650mA. (3)Its reverse leakage peak would be 550mA. (4)Its switching min critical dv/dt exponential to Vdrm would be 2000V/us. (5)Its gate current to trigger would be 300mA. (6)Its gate voltage to trigger would be 4.5V. (7)Its non-triggering gate voltage would be 0.25V. (8)Its peak forward gate current would be 6A. (9)Its peak reverse gate voltage would be 20V. (10)Its threshold voltage would be 1.16V. And so on. If you have any question or suggestion or want to know more TD20 information please contact us for details. Thank you!