TDA21106

Product :
Supply Voltage - Max :
Package / Case :
Packaging :
Mounting Style : SMD/SMT
Supply Current : 8 mA
Type : High Side/Low Side
Maximum Operating Temperature : + 150 C
Maximum Power Dissipation : 800 mW
Fall Time : 25 ns
Supply Voltage - Min : 10.8 V
Rise Time : 33 ns


Features:

• Fast rise and fall times for frequencies up to 2 MHz
• Capable of sinking more than 4A peak currents for lowest switching losses
• Charges High Side MOSFET gate drive voltage from 6 to 12V according to PVCC setting; Low Side MOSFET at 12 V.
• Adjustable High Side MOSFET gate drive voltage via PVCC pin for optimizing ON losses and gate drive losses
• Integrates the bootstrap diode for reducing the part count
• Prevents from cross-conducting by adaptive gate drive control
• High voltage rating on Phase node
• Supports shut-down mode for very low quiescent current through three-state input
• Compatible to standard PWM controller ICs (Intersil, Analog Devices)
• Floating High Side MOSFET drive
• Footprint compatible to TDA21101G and HIP6601B
• Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s


Pinout




Specifications

Parameter	Symbol	Value		Unit
		Min.	Max.
Voltage supplied to 'VCC' pin;DC	VVCC	-0.3	25	V
Voltage supplied to 'PVCC' pin;DC	VPVCC	-0.3	25
Voltage supplied to 'PWM' pin	VPWM	-0.3	5.5
Voltage supplied to 'BOOT' pin referenced to 'PHASE'	VBOOT VPHASE	-0.3	25
Voltage supplied to 'BOOT' pin referenced to 'GND'	VBOOT	-0,3	45
Voltage rating at 'PHASE' pin, DC	VPHASE	-1	25
Voltage rating at 'PHASE' pin, tpulse_max =500ns Max Duty Cycle = 2%		-20	30
Voltage supplied to GATEHS pin referenced to 'PHASE' Tpulse_max < 100ns, Energy < 2uJ	VGATEHS	-3.5	VBOOT +0.3
Voltage supplied to GATELS pin referenced to 'GND' Tpulse_max < 100ns, Energy < 2uJ	VGATELS	-5	VVCC +0.3
Junction temperature	TJ	-25	150
Storage temperature	TS	-55	150
ESD Rating; Human Body Model			4	kV
IEC climatic category; DIN EN 60068-1		55/150/56		-

Description

The dual high speed driver of the TDA21106 is designed to drive a wide range of N-Channel low side and N-Channel high side MOSFETs with varying gate charges. It has a small propagation delay from input to output, short rise and fall times and the same pin configuration to be compatible to TDA21101G and HIP6601B. In addition it provides protection features as well as a three-state mode for efficiency reasons. The high breakdown voltage makes it suitable for mobile applications.


Parameters:

Technical/Catalog Information	TDA21106
Vendor	Infineon Technologies
Category	Integrated Circuits (ICs)
Configuration	High and Low Side, Synchronous
Voltage - Supply	10.8 V ~ 13.2 V
Current - Peak	4A
Delay Time	20ns
Package / Case	DSO-8
Packaging	Tape & Reel (TR)
Number of Outputs	2
Input Type	PWM
Number of Configurations	1
Operating Temperature	-25°C ~ 150°C
High Side Voltage - Max (Bootstrap)	30V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	TDA21106 TDA21106