Photodiodes 60V 215mW 940nm
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Product : | PIN Photodiodes | Reverse Voltage : | 60 V | ||
Maximum Dark Current : | 30 nA | Peak Wavelength : | 940 nm | ||
Rise Time : | 100 ns | Fall Time : | 100 ns | ||
Half Intensity Angle Degrees : | 65 deg | Package / Case : | SMD-4 |
Parameter |
Test condition |
Symbol |
Value |
Unit |
Reverse voltage |
VR |
60 |
V | |
Power dissipation | Tamb25 |
CV |
215 |
mW |
Junction temperature |
Tj |
100 |
||
Operating temperature range |
Tamb |
- 40 to + 100 |
||
Storage temperature range |
Tstg |
- 40 to + 100 |
||
Soldering temperature | In accordance with fig. 8 |
Tsd |
260 |
|
Thermal resistance junction/ ambient |
RthJA |
350 |
K/W |
TEMD5110X01 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device (SMD) including the chip with a 7.5 mm2 sensitive area and an infrared bandpass filter matched to IR Emitters operating at wavelength 870 nm or 950 nm.
Technical/Catalog Information | TEMD5110X01 |
Vendor | Semiconductors/Vishay |
Category | Sensors, Sensor Evaluation Kits |
Other Names | TEMD5110X01 TEMD5110X01 751 1048 6 ND 75110486ND 751-1048-6 |