Photodetector Transistors Ambient Light Sensor
TEPT5700: Photodetector Transistors Ambient Light Sensor
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| Maximum Power Dissipation : | 100 mW | Maximum Dark Current : | 50 nA |
| Package / Case : | T-1 3/4 |
| SYMBOL | PARAMETER | TEST CONDITION | RATING | UNIT |
| VCBO | Collector to base voltage | 6 | V | |
| VCEO | Collector to emitter voltage | 1.5 | V | |
| IC | Collector current | 20 | mA | |
| PV | Power dissipation | Tamb 55 °C | 100 | mW |
| Tj | Junction temperature | 100 | ||
| Tamb | Operating temperature range | - 40 to + 85 | ||
| Tstg | Storage temperaturerange range | - 40 to + 100 | ||
| Tsd | Soldering temperature | t 5 s, 2 mm distance to package | 260 | |
| RthJA | Thermal resistance junction/ambient | J-STD-051, soldered on PCB | 230 | K/W |
TEPT5700 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1¾ package. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm.