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TFD312S

Features: ·With built-in Avalanche diode·Average on-state current: IT(AV)=3A·Gate trigger current: IGT=10mA max·Isolation voltage: VISO=1500V(50Hz AC, RMS, 1min.)Specifications Parameter Symbol Ratings Unit Conditions Repetitive peak off-state voltage VDRM * V T...

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TFD312S: Features: ·With built-in Avalanche diode·Average on-state current: IT(AV)=3A·Gate trigger current: IGT=10mA max·Isolation voltage: VISO=1500V(50Hz AC, RMS, 1min.)Specifications Parameter S...

TFD312S Data Sheet

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Part Number:
TFD312S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·With built-in Avalanche diode
·Average on-state current: IT(AV)=3A
·Gate trigger current: IGT=10mA max
·Isolation voltage: VISO=1500V(50Hz AC, RMS, 1min.)


Specifications

Parameter
Symbol
Ratings
Unit
Conditions
Repetitive peak off-state voltage
VDRM
*
V
Tj=10 to +125°C, RGK=1k½
Average on-state current
I T(AV)
3.0
A
50Hz Half-cycle sinewave, 180°, Continuous current, Tc=92°C
RMS on-state current
I T (RMS)
4.7
A
Surge on-state current
ITSM
60
A
50Hz Half-cycle sinewave, Peak value, Non-repetitive, Tj =125°C
Squared rated current and time product
I2 t
18
A2 •sec
2ms t 10ms
Peak forward gate voltage
VFGM
1.5
V
f50Hz, duty 10%
Peak reverse gate voltage
VRGM
5.0
V
f 50Hz
Peak gate power loss
PGM
5.0
W
f50Hz, duty 10%
Average gate power loss
P G(AV)
0.5
W
Junction temperature
Tj
10 to +125
°C
Storage temperature
Tstg
40 to +125
°C
Isolation voltage
VISO
1500
V
 50Hz Sine wave, RMS, Terminal to case, 1min.
 
*
 



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