TFR3N

The TFR3N is a type of TOSHIBA fast recovery diode silicon diffused device.

The absolute maximum ratings of TFR3N can be summerized as:(1)repetitive peak reverse voltage, VRRM is 1000 V; (2)average forward current, IF(AV)) is 0.2 A; (3)I2t limit value( t is 1 to 10 ms), I2t is 0.5 A2s; (4)peak one cycle surge forward current(non repetitive), IFSM is 10 A(50 Hz); (5)junction temperature, Tj is -40 to 125; (6)storage temperature range, stg is -40 to 125.

The electrical characteristics of TFR3N can be summerized as:(1): peak forward voltage, VFM is 1.5 V max when IFM is 0.1 A; (2): repetitive peak reverse current, IRRM is 5 uA max when VRRM is rated; (3): reverse recovery time, trr is 1.5 us max when IF is 10 mA and IR is 10 mA.