Features: • 0.25 um pHEMT Technology• 17 dB Nominal Gain• 31 dBm Pout @ P1dB,• Psat 33dBm @ 6V , 34dBm @7V• Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat• Chip Dimensions 4.13 x 3.30 x 0.1 mmApplication• Military Radar Systems• Ka Band Sat-Com•...
TGA1141-EPU: Features: • 0.25 um pHEMT Technology• 17 dB Nominal Gain• 31 dBm Pout @ P1dB,• Psat 33dBm @ 6V , 34dBm @7V• Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat• Chip Di...
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Features: • HFET Technology• 12.5 -15.5 GHz Frequency Range• > 3W Nominal Pou...
Features: • 0.25um pHEMT Technology• 36-40 GHz Frequency Range• 22 dBm Nominal P...
| SYMBOL | Parameter 1/ | VALUE | NOTES |
| V+ | Positive Supply Voltage | 8 V | 2/ |
| V - | Negative Supply Voltage Range | -5 TO 0 V | |
| I+ | Drain Current | 1.76A | 2/ |
| |IG| | Positive Supply Current | 70 mA | |
| PIN | Input Continuous Wave Power | 27 dBm | |
| PD | Power Dissipation | 9.4 W | 2/ |
| TCH | Operating Channel Temperature | 150 | 5/ 6/ |
| TM | Mounting Temperature (30 Seconds) | 320 | |
| TSTG | Storage Temperature | -65 to 150 |