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TGA4511-EPU

Features: • 0.15 um pHEMT Technology• 15 dBm Nominal Pout @ 35 GHz• 17 dB Nominal Gain @ 35 GHz• 2.5 dB Noise Figure @ 35 GHz• Bias Conditions: 3.5V, 110 mA• Chip Dimensions: 2.7mm x 1.8mmApplication• Point-to-Point Radio• Point-to-Multipoint RadioSp...

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SeekIC No. : 004518374 Detail

TGA4511-EPU: Features: • 0.15 um pHEMT Technology• 15 dBm Nominal Pout @ 35 GHz• 17 dB Nominal Gain @ 35 GHz• 2.5 dB Noise Figure @ 35 GHz• Bias Conditions: 3.5V, 110 mA• Chip...

TGA4511-EPU Data Sheet

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Part Number:
TGA4511-EPU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/18

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Product Details

Description



Features:

• 0.15 um pHEMT Technology
• 15 dBm Nominal Pout @ 35 GHz
• 17 dB Nominal Gain @ 35 GHz
• 2.5 dB Noise Figure @ 35 GHz
• Bias Conditions: 3.5V, 110 mA
• Chip Dimensions: 2.7mm x 1.8mm


Application

• Point-to-Point Radio
• Point-to-Multipoint Radio


Specifications

SYMBOL PARAMETER VALUE NOTES
V+ Positive Supply Voltage 6 V 4/
V- Negative Supply Voltage Range -2 to 0 V  
I+ Positive Supply Current (Quiescent) 400 mA 4/
| IG | Gate Supply Current 40 mA  
PIN Input Continuous Wave Power TBD  
PD Power Dissipation TBD 3/ 4/
TCH Operating Channel Temperature 150 1/ 2/
TM Mounting Temperature (30 Seconds) 320  
TSTG Storage Temperature -65 to 150  



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