Transistors RF GaAs 1.25mm GaN Discrete
TGF2023-01: Transistors RF GaAs 1.25mm GaN Discrete
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| Technology Type : | HEMT | Frequency : | 18 GHz |
| Gain : | 15 dB | Drain Source Voltage VDS : | 40 V |
| Gate-Source Breakdown Voltage : | - 3 V | Continuous Drain Current : | 375 mA |
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
| Package / Case : | 2-Pin-Die |