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TGF2961-SD

Features: • Frequency Range: DC-4 GHzNominal 900 MHz Application Board Performance:• TOI: 44 dBm• 31 dBm Psat, 30 dBm P1dB• Gain: 18 dB• Input Return Loss: -15 dB• Output Return Loss: -7 dB• Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V(Typical)• Package ...

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SeekIC No. : 004518416 Detail

TGF2961-SD: Features: • Frequency Range: DC-4 GHzNominal 900 MHz Application Board Performance:• TOI: 44 dBm• 31 dBm Psat, 30 dBm P1dB• Gain: 18 dB• Input Return Loss: -15 dB•...

TGF2961-SD Data Sheet

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Part Number:
TGF2961-SD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Frequency Range: DC-4 GHz
Nominal 900 MHz Application Board Performance:
• TOI: 44 dBm
• 31 dBm Psat, 30 dBm P1dB
• Gain: 18 dB
• Input Return Loss: -15 dB
• Output Return Loss: -7 dB
• Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V(Typical)
• Package Dimensions: 4.5 x 4 x 1.5 mm


Application

• Cellular Base Stations
• WiMAX
• Wireless Infrastructure
• IF & LO Buffer Applications
• RFID


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Notes
Vd-Vg Drain to Gate Voltage 17 V  
Vd Drain Voltage 9 V 2/
Vg Gate Voltage Range -5 to 0 V  
Id Drain Current 780 mA 2/
Ig Gate Current Range -2.4 to 17.8 mA  
Pin Input Continuous Wave Power 29 dBm 2/

1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied.

2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV.


Description

The TGF2961-SD is a high performance 1-watt Heterojunction GaAs Field Effect Transistor (HFET) housed in a low cost SOT89 surface mount package.

The device's ideal operating point is at a drain bias of 8 V and 200 mA. At this bias at 900 MHz when matched into 50 ohms using external components, this device is capable of 18 dB of gain, 30 dBm of saturated output power, and 44 dBm of output IP3 Evaluation boards at 900 MHz, 1900 MHz and 2100 MHz available on request.

RoHS and Lead-Free compliant.




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