Transistors RF GaAs DC-6.0GHz 7 Watt HFET
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SpecificationsDrain-to-source Voltage, Vds............................... . . . . . . 12 VGate-to-...
SpecificationsDrain-to-source Voltage, Vds............................... . . . . . . . 12 VGate-t...
| Technology Type : | HEMT | Frequency : | 2.3 GHz | ||
| Gain : | 11.5 dB | Forward Transconductance gFS (Max / Min) : | 2.97 S | ||
| Drain Source Voltage VDS : | 12 V | Gate-Source Breakdown Voltage : | - 22 V | ||
| Continuous Drain Current : | 4.4 A | Maximum Operating Temperature : | + 150 C | ||
| Mounting Style : | SMD/SMT | Package / Case : | 12-Pin-Die |
| Technical/Catalog Information | TGF4118 |
| Vendor | Triquint Semiconductor Inc |
| Category | Discrete Semiconductor Products |
| Transistor Type | HFET |
| Voltage - Rated | 12V |
| Current Rating | - |
| Package / Case | Die |
| Packaging | Tray |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TGF4118 TGF4118 |