Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 12 A PDISS Power Dissipation 175 W TJ Junction Temperature +200 °C TSTG Storage Tempera...
TH416: Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 12 A...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 70 | V |
| VCEO | Collector-Emitter Voltage | 35 | V |
| VEBO | Emitter-Base Voltage | 4.0 | V |
| IC | Device Current | 12 | A |
| PDISS | Power Dissipation | 175 | W |
| TJ | Junction Temperature | +200 | °C |
| TSTG | Storage Temperature | - 65 to +150 | °C |
The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.