Position: Home  > All Categories> Integrated Circuits (ICs) > THM1001TE

THM1001TE

Features: • +23 dBm at 44% Power Added Efficiency• Temperature stability better than 1dB• Power-control and Power-down modes• Single 3.3 V Supply Operation• Temperature Rating: -40C to +85C• 8 lead Exposed Pad MSOP8 Plastic PackageApplication• Bluetoothtm ...

product image

THM1001TE Picture
See larger image
SeekIC No. : 004518700 Detail

THM1001TE: Features: • +23 dBm at 44% Power Added Efficiency• Temperature stability better than 1dB• Power-control and Power-down modes• Single 3.3 V Supply Operation• Temperature...

THM1001TE Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
THM1001TE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• +23 dBm at 44% Power Added Efficiency
• Temperature stability better than 1dB
• Power-control and Power-down modes
• Single 3.3 V Supply Operation
• Temperature Rating: -40C to +85C
• 8 lead Exposed Pad MSOP8 Plastic Package


Application

• Bluetoothtm Wireless Technology (Class 1)
• USB Dongles, modules
• PCMCIA, Flash cards
• Access Points
• 2.4GHz cordless telephone


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Unit
Min
Max
Supply Voltage
Vcc
V
-0.3
+3.6
Control Voltage
VCTL
V
-0.3
Vcc
Ramping Voltage
VRAMP
V
-0.3
Vcc
IN
 RF Input Power
dBm
+8
TA
Operating Temperature Range
-40
+85
Tstg
 Storage Temperature Range
-40
+150
Tj
 Maximum Junction Temperature
+150
Operation in excess of any one of above Absolute Maximum Ratings may result inpermanent damage.
Handling and assembly of this device should be at ESD protected workstations.


Description

A monolithic, high-efficiency, silicon-germanium power amplifier IC, the THM1001TE is designed for 2.4GHz wireless applications including Bluetoothtm Class 1 wireless technology and 2.4GHz cordless telephone applications. It delivers +23 dBm output power, making it capable of overcoming insertion losses of up to 3.0dB between amplifier output and antenna.

The silicon-germanium structure of the THM1001TE, and its exposed-die-pad package, soldered to the system PCB, provide high thermal conductivity and a subsequently low junction temperature.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Crystals and Oscillators
WT325BI0030.000000
2SB49
Audio Products
HUC1002
WM-64CT
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Optical Inspection Equipment
AA924
A21K4B
View more