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TIG030TS

Features: • Low-saturation voltage.• 4V drive.• Enhansment type.• Built-in gate-to-emitter protection diode.• Mounting height 1.1mm, mounting area 19.2mm2.PinoutSpecifications Absolute maximum ratings VCES [V] 400 VGES(DC) [V] ±6 ICP [A] 150 ...

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TIG030TS: Features: • Low-saturation voltage.• 4V drive.• Enhansment type.• Built-in gate-to-emitter protection diode.• Mounting height 1.1mm, mounting area 19.2mm2.PinoutSpecifi...

TIG030TS Data Sheet

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Part Number:
TIG030TS
Supply Ability:
5000

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Product Details

Description



Features:

• Low-saturation voltage.
• 4V drive.
• Enhansment type.
• Built-in gate-to-emitter protection diode.
• Mounting height 1.1mm, mounting area 19.2mm2.




Pinout






Specifications

Absolute maximum ratings
VCES [V] 400
VGES(DC) [V] ±6
ICP [A] 150
Electrical characteristics
VGE(off) min [V] 0.5
VGE(off) max [V] 1.2
VCE [V] 10
IC [mA] 1
VCE(sat) typ [V] 3.7
VCE(sat) max [V] 5.4
IC [A] 150
VGE [V] 4
Cies typ [pF] 2610
VCE [V] 10
f [MHz] 1


Parameter Symbol Conditions Ratings Unit
Collector-to-Emitter Voltage VCES 400 V
Gate-to-Emitter Voltage (DC) VGES ±6 V
Gate-to-Emitter Voltage (Pulse) VGES PW1ms ±8 V
Collector Current (Pulse) ICP PW500s, duty cycle0.5%, CM=400F 150 A
Maximum Collector-to-Emitter dv/dt dVCE /dt VCE320V, starting Tch=25°C 400 V/s
Channel Temperature Tch 150
Storage Temperature Tstg --40 to +150





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