TIG052TS

Features: • Low-saturation voltage.• Low voltag drive (2.5V).• Enhansment type.• Built-in Gate-to-Emitter protection diode.• Mounting Height 1.1mm, Mounting Area 19.2mm2.• dv / dt guarantee.*Specifications Absolute maximum ratings VCES [V] 400 ...

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SeekIC No. : 004519143 Detail

TIG052TS: Features: • Low-saturation voltage.• Low voltag drive (2.5V).• Enhansment type.• Built-in Gate-to-Emitter protection diode.• Mounting Height 1.1mm, Mounting Area 19.2mm...

floor Price/Ceiling Price

Part Number:
TIG052TS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

• Low-saturation voltage.
• Low voltag drive (2.5V).
• Enhansment type.
• Built-in Gate-to-Emitter protection diode.
• Mounting Height 1.1mm, Mounting Area 19.2mm2.
• dv / dt guarantee.*





Specifications

Absolute maximum ratings
VCES [V] 400
VGES(DC) [V] 6
ICP [A] 150
Electrical characteristics
VGE(off) min [V] 0.4
VGE(off) max [V] 1
VCE [V] 10
IC [mA] 1
VCE(sat) typ [V] 3.7
VCE(sat) max [V] 5.5
IC [A] 150
VGE [V] 2.5
Cies typ [pF] 3800
VCE [V] 10
f [MHz] 1


Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Emitter Voltage
VCES
800
V
Gate-to-Emitter Voltage (DC)
VGES
±6
V
Gate-to-Emitter Voltage (Pulse)
VGES
PW1ms
±8
V
Collector Current (Pulse)
ICP
PW500s, duty cycle0.5%, CM=400F, VGE=2.5V
150
A
Maximum Collector-to-Emitter dv / dt
dVCE / dt
VCE320V, starting Tch=25
400
V / s
Channel Temperature
Tch
150
Storage Temperature
Tstg
-40 to +150





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