TIP110

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 60 V
Collector- Base Voltage VCBO : 60 V
Package / Case : TO-220AB
Maximum DC Collector Current : 2 A
Maximum Collector Cut-off Current : 1000 uA


Features:

• High DC Current Gain − h_FE = 2500 (Typ) @ I_C = 1.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
V_CEO(sus) = 60 Vdc (Min) − TIP110, TIP115
= 80 Vdc (Min) − TIP111, TIP116
= 100 Vdc (Min) − TIP112, TIP117
• Low Collector−Emitter Saturation Voltage −
V_CE(sat) = 2.5 Vdc (Max) @ I_C
=2.0 Adc
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*






Specifications






Description

TIP110 is Designed for general−purpose amplifier and low−speed switching applications.

Parameters:

Technical/Catalog Information	TIP110
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	2A
Power - Max	50W
DC Current Gain (hFE) (Min) @ Ic, Vce	500 @ 2A, 4V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 8mA, 2A
Frequency - Transition	-
Current - Collector Cutoff (Max)	2mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TIP110 TIP110 497 2545 5 ND 49725455ND 497-2545-5