TIP140

Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 60 V
Collector- Base Voltage VCBO : 60 V
Maximum Collector Cut-off Current : 1000 uA
Package / Case : SOT-93
Maximum DC Collector Current : 10 A
Power Dissipation : 125 W


Application

·Designed for general purpose amplifier and low frequency switching applications.




Specifications

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-Base Voltage	60	V
VCEO	Collector-Emitter Voltage	60	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	10	A
ICM	Collector Current-Peak	15	A
IB	Base Current-Continuous	0.5	A
PC	Collector Power Dissipation @TC=25	125	W
TJ	Junction Temperature	150	°C
Tstg	Storage Temperature Range	-65~150	°C

Description

TIP140 features

·High DC Current Gain-: h_FE = 1000(Min)@ I_C= 5A
·Collector-Emitter Sustaining Voltage-: V_CEO(SUS) = 60V(Min)
·Complement to Type TIP145

Parameters:

Technical/Catalog Information	TIP140
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	10A
Power - Max	125W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic	2V @ 10mA, 5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	2mA
Mounting Type	Through Hole
Package / Case	TO-218
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	TIP140 TIP140 TIP140OS ND TIP140OSND TIP140OS