TIP29B

Configuration :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 3 MHz
Packaging : Box
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 40


Description

The TIP29B is designed as complementary silicon plastic power transistor for use in general purpose amplifier and switching applications. Compact TO-220 AB package.

Some absolute maximum ratings of TIP29B have been concluded into several points as follow. (1)Its collector to emitter voltage would be 80V. (2)Its collector to base voltage would be 80V. (3)Its emitter to base voltage would be 5.0Vdc. (4)Its collector current would be 1.0Adc for continuous and would be 3.0Adc for peak. (5)Its base current would be 0.4Adc. (6)Its total power dissipation would be 30W and derate above 25°C would be 0.24W/°C. (7)Its operating storage junction temperature range would be from -65°C to +150°C. (8)Its unclamped inductive load would be 32mJ. (9)Its thermal resistance, junction to ambient would be 62.5°C/W. (10)Its thermal resistance, junction to case would be 4.167°C/W. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of TIP29B are concluded as follow. (1)Its collector to emitter sustaining voltage would be min 80Vdc. (2)Its collector to emitter cutoff current would be max 0.3mA with conditions of Vce=60V and Ib=0. (3)Its collector to emitter cutoff current would be max 200uAdc with condition of Vce=80Vdc, Veb=0. (4)Its emitter to base cutoff current would be max 1.0mA. (5)Its DC current gain would be min 40 at Ic=0.2A and would be min 15 and typ 75 at Ic=1.0A. (6)Its collector to emitter saturation voltage would be max 0.7Vdc at Ic=1.0A and Ib=125mA. (7)Its base to emitter on voltage would be max 1.3Vdc at Ic=1.0A and Vce=4.0Vdc. (8)Its small signal current gain would be min 20. (9)Its current gain bandwidth product would be min 3.0MHz with condition of Ic=200mA, Vce=10Vdc, ftest=1.0MHz. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

Parameters:

Technical/Catalog Information	TIP29B
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1A
Power - Max	30W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1A, 4V
Vce Saturation (Max) @ Ib, Ic	700mV @ 125mA, 1A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	300A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	TIP29B TIP29B TIP29BOS ND TIP29BOSND TIP29BOS