TIP30

Configuration :
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Collector- Emitter Voltage VCEO Max : 40 V
Maximum Operating Frequency : 3 MHz
Packaging : Box
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 40


Specifications

			29	29A		29B	29C
			30	30A		30B	30C
Collector-base voltage (open emitter)	VCBO	max.	40	60		80	100	V
Collector-emitter voltage (open base)	VCEO	max.	40	60		80	100	V
Collector current	IC	max.			1.0			A
Total power dissipation up to TC = 25°C	Ptot	max.			30			W
Junction temperature	Tj	max.			150			°C
Collector-emitter saturation voltage IC = 1 A; IB = 125 mA	VCEsat	max.			0.7
D.C. current gain IC = 1 A; VCE = 4 V	hFE	max.			15 75			V
RATINGS (at TA=25°C unless otherwise specified) Limiting values		max.	29 30	29A 30A		29B 30B	29C 30C
Collector-base voltage (open emitter)	VCBO	max.	40	60		80	100	V
Collector-emitter voltage (open base)	VCEO	max.	40	60		80	100	V

Parameters:

Technical/Catalog Information	TIP30
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	1A
Power - Max	30W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1A, 4V
Vce Saturation (Max) @ Ib, Ic	700mV @ 125mA, 1A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	300A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	TIP30 TIP30 TIP30OS ND TIP30OSND TIP30OS