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TIS93_J35Z

Transistors Bipolar (BJT) PNP MED PWR/GPA

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SeekIC No. : 00211444 Detail

TIS93_J35Z: Transistors Bipolar (BJT) PNP MED PWR/GPA

TIS93_J35Z Data Sheet

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Part Number:
TIS93_J35Z
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.8 A
DC Collector/Base Gain hfe Min : 100 at 50 mA at 2 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.8 A
Collector- Emitter Voltage VCEO Max : 40 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 100 at 50 mA at 2 V


Parameters:

Technical/Catalog InformationTIS93_J35Z
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)800mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 2V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TIS93_J35Z
TIS93_J35Z



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