TISP5150H3BJ

Specifications RATING SYMBOL VALUE UNIT '5070Repetitive peak off-state voltage, (see Note 1) '5080'5110'5150 VDRM -58-65-80-120 V Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 ...

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SeekIC No. : 004519555 Detail

TISP5150H3BJ: Specifications RATING SYMBOL VALUE UNIT '5070Repetitive peak off-state voltage, (see Note 1) '5080'5110'5150 VDRM -58-65-80-120 V Non-repetitive peak on-state pulse ...

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Part Number:
TISP5150H3BJ
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Specifications

RATING
SYMBOL
VALUE
UNIT
'5070
Repetitive peak off-state voltage, (see Note 1)                                                                                     '5080
'5110
'5150
VDRM
-58
-65
-80
-120
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
            2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
            8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wavegenerator)
            10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 
            5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
            0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
            5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape)
            5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
            10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
            10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
ITSP

500
300
250
220
200
200
200
160
100

A
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
             20 ms (50 Hz) full sine wave
             16.7 ms (60 Hz) full sine wave
             1000 s 50 Hz/60 Hz a.c.
ITSM
55
60
2.1
A
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 140 A
diT/dt
400
A/µs
Junction temperature
TJ
-40 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C



Description

These devices TISP5xxxH3BJ are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of ISDN power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide protection for single supply analogue SLICs. A combination of three devices will give a low capacitance protector network for the 3-point protection of ISDN lines.

The protector TISP5xxxH3BJ consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of the anti-parallel diode.

This TISP5xxxH3BJ range consists of four voltage variants to meet various maximum system voltage levels (58 V to 120 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack.




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