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TK09H90A

Application` Low drain−source ON resistance : RDS (ON) = 1.0 (typ.)` High forward transfer admittance : |Yfs| =6.0 S (typ.)` Low leakage current : IDSS = 100 A (max) (VDS = 720V)` Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristic Symbol Rating...

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TK09H90A: Application` Low drain−source ON resistance : RDS (ON) = 1.0 (typ.)` High forward transfer admittance : |Yfs| =6.0 S (typ.)` Low leakage current : IDSS = 100 A (max) (VDS = 720V)` Enhancement ...

TK09H90A Data Sheet

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Part Number:
TK09H90A
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Application

` Low drain−source ON resistance : RDS (ON) = 1.0 (typ.)
` High forward transfer admittance : |Yfs| =6.0 S (typ.)
` Low leakage current : IDSS = 100 A (max) (VDS = 720V)
` Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 


Specifications

Characteristic
Symbol
Rating
Unit
Drain−source voltage
VDSS
900
V
Drain−gate voltage (RGS = 20 k)
VDGR
900
V
Gate−source voltage
VGSS
±30
V
Drain current DC (Note 1)
ID
9
A
Pulse (Note 1)
IDP
27
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Single-pulse avalanche energy (Note 2)
EAS
778
mJ
Avalanche current
IAR
8
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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