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MFG:TOSHIBA Package Cooled:TO-3P D/C:05+

MFG:TOSHIBA Package Cooled:TO-3P D/C:05+

| Symbol | Characteristic | Rating | Unit | |
| VDSS | Drain-Source Voltage | 900 | V | |
| VDGR | Drain?gate voltage (RGS = 20 k) | 900 | V | |
| VGSS | Gate?source voltage | ±30 |
V | |
| ID IDP |
Drain current | DC (Note 1) | 13 | A |
| Pulse (Note 1) | 39 | |||
| PD | Drain power dissipation (Tc=25) | 150 | W | |
| EAS | Single-pulse avalanche energy (Note 2) |
491 | mJ | |
| IAR | Avalanche current | 13 | A | |
| EAR | Repetitive avalanche energy (Note 3) | 15 | mJ | |
| Tch | Channel temperature | 150 | ||
| Tstg | Storage temperature range | -55~150 | ||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating onditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriatereliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
TK10415
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