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TK20A25D,S5Q(M

MOSFET N-CH 250V 20A TO-220SIS

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SeekIC No. : 003432568 Detail

TK20A25D,S5Q(M: MOSFET N-CH 250V 20A TO-220SIS

TK20A25D,S5Q(M Data Sheet

floor Price/Ceiling Price

US $ 1.37~1.37 / Piece | Get Latest Price
Part Number:
TK20A25D,S5Q(M
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~100
  • Unit Price
  • $1.37
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 250V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 20A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) @ Vgs: 55nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2550pF @ 100V
Power - Max: 45W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220SIS    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Current - Continuous Drain (Id) @ 25° C: 20A
Drain to Source Voltage (Vdss): 250V
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 55nC @ 10V
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power - Max: 45W
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
Manufacturer: Toshiba
Supplier Device Package: TO-220SIS
Input Capacitance (Ciss) @ Vds: 2550pF @ 100V


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