MOSFET MOSFET DTMOS-II N-CH 600V, 20A
TK20A60U(Q,M): MOSFET MOSFET DTMOS-II N-CH 600V, 20A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V |
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 20 A |
| Resistance Drain-Source RDS (on) : | 0.19 Ohms at 10 V (Typ) | Configuration : | Single |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220SIS |
| Packaging : | Tray |
| Technical/Catalog Information | TK20A60U(Q,M) |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 1470pF @ 10V |
| Power - Max | 45W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package / Case | SC-67 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TK20A60U Q,M TK20A60UQ,M TK20A60UQM ND TK20A60UQMND TK20A60UQM |