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TK55D10J1(Q)

MOSFET MOSFET N-Ch

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SeekIC No. : 00164272 Detail

TK55D10J1(Q): MOSFET MOSFET N-Ch

TK55D10J1(Q) Data Sheet

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Part Number:
TK55D10J1(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 55 A
Resistance Drain-Source RDS (on) : 0.0105 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Package / Case : TO-220
Packaging : Bulk
Continuous Drain Current : 55 A
Resistance Drain-Source RDS (on) : 0.0105 Ohms


Parameters:

Technical/Catalog InformationTK55D10J1(Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs10.5 mOhm @ 27A, 10V
Input Capacitance (Ciss) @ Vds 5700pF @ 10V
Power - Max140W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / Case2-10V1A
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TK55D10J1 Q
TK55D10J1Q



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