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TK65E10N1,S1X

MOSFET N CH 100V 148A TO220

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SeekIC No. : 003430305 Detail

TK65E10N1,S1X: MOSFET N CH 100V 148A TO220

TK65E10N1,S1X Data Sheet

floor Price/Ceiling Price

US $ .92~2.02 / Piece | Get Latest Price
Part Number:
TK65E10N1,S1X
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~5000
  • Unit Price
  • $2.02
  • $1.8
  • $1.62
  • $1.48
  • $1.33
  • $1.2
  • $1.01
  • $.96
  • $.92
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 148A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 32.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 81nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5400pF @ 50V
Power - Max: 192W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 81nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Manufacturer: Toshiba
Power - Max: 192W
Current - Continuous Drain (Id) @ 25° C: 148A
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 32.5A, 10V
Input Capacitance (Ciss) @ Vds: 5400pF @ 50V


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