TK6A60D(STA4,Q,M)

MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm

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SeekIC No. : 00158083 Detail

TK6A60D(STA4,Q,M): MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm

floor Price/Ceiling Price

US $ .4~.51 / Piece | Get Latest Price
Part Number:
TK6A60D(STA4,Q,M)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 0~1390
  • 1390~2000
  • 2000~5000
  • 5000~10000
  • Unit Price
  • $.51
  • $.43
  • $.41
  • $.4
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2026/4/28

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Product Details

Quick Details

Packaging : Tube    

Description

Transistor Polarity :
Drain-Source Breakdown Voltage :
Gate-Source Breakdown Voltage :
Continuous Drain Current :
Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Tube


Parameters:

Technical/Catalog InformationTK6A60D(STA4,Q,M)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs1.25 Ohm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 800pF @ 25V
Power - Max40W
PackagingTube
Gate Charge (Qg) @ Vgs16nC @ 10V
Package / Case2-10U1B
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TK6A60D STA4,Q,M
TK6A60DSTA4,Q,M
TK6A60DSTA4QM ND
TK6A60DSTA4QMND
TK6A60DSTA4QM



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