TK70D06J1(Q), US $ 1.19-1.99 , Toshiba, TK70D06J1(Q) DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00151467 Detail

TK70D06J1(Q): MOSFET MOSFET N-Ch

TK70D06J1(Q) Data Sheet

US $ 1.19~1.99 / Piece | Get Latest Price

Part Number:: TK70D06J1(Q)
Mfg:: Toshiba
Supply Ability:: 5000

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10~100
100~250

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$1.99
$1.58
$1.35
$1.19

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Upload time: 2025/12/17

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	60 V
Gate-Source Breakdown Voltage :	20 V	Continuous Drain Current :	70 A
Resistance Drain-Source RDS (on) :	5.1 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Bulk

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 20 V
Package / Case : TO-220
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 5.1 mOhms
Continuous Drain Current : 70 A

Parameters:

Technical/Catalog Information	TK70D06J1(Q)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	70A
Rds On (Max) @ Id, Vgs	6.4 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	5450pF @ 10V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	87nC @ 10V
Package / Case	2-10V1A
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TK70D06J1 Q TK70D06J1Q

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TK70D06J1(Q)

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