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MFG:TOSHIBA  Package Cooled:SMD  D/C:09+  

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Part Number: TLP176G

 

MFG: TOSHIBA

Package Cooled: SMD

D/C: 09+

Description: The TOSHIBA TLP176G consists of gallium arsenide infrared emitting diode optically coupled to a photoM...


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TLP176G General Description


The TOSHIBA TLP176G consists of gallium arsenide infrared emitting diode optically coupled to a photoMOS FET in a SOP, which is suitable for surface mount assembly. The TLP176G is suitable for the modem applications which require
space savings.

TLP176G Maximum Ratings

Characteristic Symbol Rating Unit
LED Forward current
Forward current derating (Ta25)
Pulse forward current(100s pulse,100pps)
Reverse voltage
Junction temperature
I F
IF/
IFP
VR
Tj
60
0.7
1
5
125

mA
mA/
A
V

Detector Offstate output terminal voltage
Onstate current
Onstate current derating (Ta 25)
Junction temperature
VOFF
ION
ION/
Tj
35
120
1.2
125
V
mA
mW mA/
Storage temperature range Tstg 55~125
Operating temperature range Topr 40~85
Lead soldering temperature (10s) Tsol 260
Total package power dissipation PT 350 mW
Total package power dissipation derating (Ta25) PT/ -0.35 mW /
Isolation voltage (AC,1min., R.H.60%) (Note1) BVS 1500 Vrms


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(Note 1): Device considered a twoterminal device: Pin 1 and 2 shorted together and pin 3 and 4 shorted together.

TLP176G Connection Diagram

TLP176G  Connection Diagram

TLP176G datasheet

TLP176G
PDF/DataSheet Download

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