TLP181GB

The TLP181GB is one member of the TLP181 family which is designed as the GaAs ired & photo-transistor that can be used in (1)office machine; (2)program-mable controllers; (3)AC / DC. input module; (4)telecommunication. This device consist of a photo transistor optically coupled to a gallium arsenide infrared emitting diode.

Features of the TLP181GB are:(1)collector-emitter voltage: 80V (min.);(2)current transfer ratio: 50% (min.) rank GB: 100% (min.);(3)isolation voltage: 3750V rms (min.);(4)UL recognized: UL1577, file no. E67349;(5)option (V4) type:--VDE approved: VDE0884 satisfied; --maximum operating insulation voltage: 565VPK; --highest permissible over voltage: 6000VPK.

The absolute maximum ratings of the TLP181GB can be summarized as:(1)forward current:50 mA;(2)forward current detating:-0.7 (Ta 53°C) mA/°C;(3)pulse forward current (100s pulse, 100pps):1 A;(4)reverse voltage:5 V;(5)junction temperature:125 °C;(6)collector-emitter voltage:80 V;(7)emitter-collector valtage:7 V;(8)collector current:50 mA;(9)collector power dissipation (1 circuit):150 mW;(10)collector power dissipation derating (1 circuit Ta 25°C):-1.5 mW/°C;(11)junction temperature:125 °C;(12)lead soldering temperature:260 (10s) °C;(13)operating temperature range:-55 to 100 °C;(14)storage temperature range:-55 to 125 °C;(15)total package power dissipation:200 mW;(16)isolation voltage (AC, 1min., R.H. 60%):3750 Vrms;(17)total package power dissipation derating (Ta 25°C):-2.0 mW /°C. If you want to know more information such as the electrical characteristics about the TLP181GB, please download the datasheet in www.seekic.com or www.chinaicmart.com .