Features: • 4 pin SSOP (SSOP4) : 1.8 mm high, 1.27 mm pitch• 1-Form-A• Peak off-state voltage: 100 V (Min.)• Trigger LED current : 5 mA (Max.)• On-state current : 80 mA (Max.)• On-state resistance : 14 (Max.), 8 (Typ.)• Output capacitance : 8 pF (Max.), ...
TLP3220: Features: • 4 pin SSOP (SSOP4) : 1.8 mm high, 1.27 mm pitch• 1-Form-A• Peak off-state voltage: 100 V (Min.)• Trigger LED current : 5 mA (Max.)• On-state current : 80 mA...
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Features: · Peak Off-State Voltage : 400 V (min)· Trigger LED Current : 15 mA (max) (TLP3021(S)) 1...

| Characteristic | Symbol | Rating | Unit | |
| LED | Forward current | IF | 50 | mA |
| Forward current derating (Ta = 25) | IF/ | −0.5 | mA/ | |
| Reverse voltage | VR | 5 | V | |
| Junction temperature | Tj | 125 | ||
| Detector | Off-State output terminal voltage | VOFF | 100 | V |
| On-State current | ION | 80 | mA | |
| On-State current derating (Ta =25) | ION/ | −0.8 | mA/ | |
| Junction temperature | Tj | 125 | ||
| Storage temperature range | Tstg | −40~125 | ||
| Operating temperature range | Topr | −20~85 | ||
| Lead soldering temperature (10 s) | Tsol | 260 | ||
| Isolation voltage (AC, 1 min., R.H. = 60%) (Note 1) | BVS | 1500 | Vrms | |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(Note 1): Device considered a two-terminal device: Pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
The TOSHIBA TLP3220 is a super small-outline photorelay, suitable for surface-mount assembly. The TLP3220 consists of a GaAs infrared-emitting diode optically coupled to a photo-MOS FET and housed in a 4-pin package.