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MFG:TOSHIBA  Package Cooled:SOP8  D/C:0329+  

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Part Number: TLP351F

 

MFG: TOSHIBA

Package Cooled: SOP8

D/C: 0329+

Description: The TOSHIBA TLP351F consists of a GaAℓAs light emitting diode and a integrated photodetector. Th...


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TLP351F General Description


The TOSHIBA TLP351F consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package.

TLP351F is suitable for gate driving circuit of IGBT or power MOSFET. Especially TLP351F is capable of "direct" gate drive of lower Power IGBTs.

Absolute maximum ratings and electrical characteristics are the same as TLP351 technical datasheet.

TLP351F Features

• Peak output current: ±0.6 A (max)
• Guaranteed performance over temperature: −40 to 100°C
• Supply current: 2 mA (max)
• Power supply voltage: 10 to 30 V
• Threshold input current : IF = 5 mA (max)
• Switching time (tpLH/tpHL) : 700 ns (max)
• Common mode transient immunity: 10 kV/s
• Isolation voltage: 3750 Vrms
• Construction mechanical rating

TLP351F Connection Diagram

TLP351F Connection Diagram

TLP351F datasheet

TLP
PDF/DataSheet Download

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