TLP4007G

Features: Normally closed (1-form-B) device, normally opened (1-form-A) device Peak off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) On-state current: 100 mA (max) On-state resistance: 50 (max) Isolation voltage: 2500 Vrms (min)PinoutSpecifications Characteristic Symbol ...

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SeekIC No. : 004521742 Detail

TLP4007G: Features: Normally closed (1-form-B) device, normally opened (1-form-A) device Peak off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) On-state current: 100 mA (max) On-state resistance:...

floor Price/Ceiling Price

Part Number:
TLP4007G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/12

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Product Details

Description



Features:

 Normally closed (1-form-B) device, normally opened (1-form-A) device
Peak off-state voltage: 350 V (min)
Trigger LED current: 3 mA (max)
On-state current: 100 mA (max)
On-state resistance: 50 (max)
Isolation voltage: 2500 Vrms (min)




Pinout

  Connection Diagram


Specifications

Characteristic
Symbol
Rating
Unit
LED
Forward current
IF
50
mA
Forward current derating (Ta 25°C)
IF / °C
-0.5
mA / °C
Peak forward current
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Detector
Off-state output terminal voltage
VOFF
350
V
On-state current One channel operation
ION
100
mA
Two channel operations
(1a1b simultaneous operation)
On-state current derating
(Ta 25°C)
One channel operation
ION/°C
-1.0
mA/°C
Two channel operations
(1a1b simultaneous operation)
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55 to 125
°C
Operating temperature range
Topr
-40 to 85
°C
Lead soldering temperature (10s)
Tsol
260
°C
Isolation voltage
(AC, 1 min., R.H. 60%) (Note1)
BVS
2500
Vrms


Note 1: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together.




Description

The Toshiba TLP4007G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage.




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