TLP521−4

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.

The TOSHIBA TLP521−1, −2 and −4 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP521−2 offers two isolated channels in an eight lead plastic DIP package, while the TLP521−4 provides four isolated channels in a sixteen plastic DIP package.

TLP521−4 specifications:
• Collector−emitter voltage: 55 V (min)
• Current transfer ratio: 50% (min) Rank GB: 100% (min)
• Isolation voltage: 2500 Vrms (min)
• UL recognized
made in Japan: UL1577, file No. E67349
made in Thailand: UL1577, file No. E152349