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MFG:TOSHIBA Package Cooled:DIP6


Part Number: TLP631
MFG: TOSHIBA
Package Cooled: DIP6
Description: The TOSHIBA TLP631 and TLP632 consist of a photo−transistor optically coupled to a gallium arsen...
MFG:TOSHIBA Package Cooled:DIP6


MFG: TOSHIBA
Package Cooled: DIP6
Description: The TOSHIBA TLP631 and TLP632 consist of a photo−transistor optically coupled to a gallium arsen...
The TOSHIBA TLP631 and TLP632 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
TLP632 is no−base internal connection for high−EMI environments.
| Parameter | Symbol | Rating | Unit | |
| Collector to Base Voltage | VCBO | 600 | V | |
| Collector to Emitter Voltage | VCEO | ±20 | V | |
| Emitter to Base Voltage | VEBO | 20 | V | |
| Collect Current | DC | IC | 40 | A |
| 1 ms | ICP | 20 | A | |
| Emitter-collector forward current |
DC | IF | 40 | mA |
| 1 ms | IFM | 40 | ||
| Collector power dissipation |
PC |
45 |
W | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55 ~ +150 | ||
TLP631
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