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MFG:TOSHIBA  Package Cooled:DIP6  

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TLP Series Datasheet download

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Part Number: TLP631

 

MFG: TOSHIBA

Package Cooled: DIP6

 

Description: The TOSHIBA TLP631 and TLP632 consist of a photo−transistor optically coupled to a gallium arsen...


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TLP631 General Description


The TOSHIBA TLP631 and TLP632 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.

TLP632 is no−base internal connection for high−EMI environments.

TLP631 Maximum Ratings

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 600 V
Collector to Emitter Voltage VCEO ±20 V
Emitter to Base Voltage VEBO 20 V
Collect Current DC IC 40 A
1 ms ICP 20 A
Emitter-collector forward
current
DC IF 40 mA
1 ms IFM 40
Collector power
dissipation
PC

45

W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ +150

TLP631 Features

• Collector−emitter voltage: 55 V (min.)
• Current transfer ratio: 50% (min.) Rank GB: 100% (min.)
• Isolation voltage: 5000Vrms (min.)
• UL recognized: UL1577, file no. E67349

TLP631 Connection Diagram

TLP631  Connection Diagram

TLP631 datasheet

TLP631
PDF/DataSheet Download

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    The TOSHIBA TLP629, TLP629−2, and −4 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode.The TLP629−2 offers two isolated channels in an eight lead plastic DIP,while the TLP629−4 provid...

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