TLP665JF

 Peak off−state voltage: 600 V (min.)
Trigger LED current: 10 mA (max.)
On−state current: 100 mA (max.)
UL recognized: UL1577, file no. E67349
Isolation voltage: 5000 Vrms (min.)
Option (D4) type
       VDE approved: DIN VDE0884 / 08.87,
                               Certificate no. 68383
       Maximum operating insulation voltage: 630VPK
       Highest permissible over voltage: 6000VPK

(Note 1) When a VDE0884 approved type is needed,please designate the " Option (D4) "

Structural parameter
     Creepage distance: 8.0mm (min.)
     Clearance: 8.0mm (min.)
     Insulation thickness: 0.5mm (min.)
Conforming safety standards:
        DIN 57 804 / VDE0804 / 1.83
        DIN IEC65 / VDE0860 / 8.81
        DIN IEC380 / VDE0806 / 8.81
        DIN IEC435 / VDE0805 / Draft Nov. 84
        DIN IEC601T1 / VDE0750T1 / 5.82
        BS7002: 1989 (EN60950)

The TOSHIBA TLP665JF consists of a photo−triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.

All parameters are tested to the specification of TLP665JF.(both condition and limits)