TLP733F General Description
The TOSHIBA TLP733F and TLP734F consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
All parameters are tested to the specification of TLP733 and TLP734. (both condition and limits)
TLP733F Features
· Collector−emitter voltage: 55 V (min.)
· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· UL recognized: UL1577, file no. E67349
· BSI approved: BS EN60065: 1994
Certificate no. 7364
BS EN60950: 1992
Certificate no. 7365
· SEMKO approved: SS4330784
Certificate no. 9325163, 9522142
· Isolation voltage: 4000 Vrms (min.)
· Option (D4) type
VDE approved: DIN VDE0884 / 06.92,
Certificate no. 74286, 91808
Maximum operating insulation voltage: 890, 1130 VPK
Highest permissible over voltage: 6000, 8000 VPK
TLP733F Connection Diagram
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