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MFG:TOSHIBA  Package Cooled:DIP6  

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Part Number: TLP734

 

MFG: TOSHIBA

Package Cooled: DIP6

 

Description: The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emit...


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TLP734 General Description


The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.

TLP734 is no−base internal connection for high−EMI environments.

TLP734 Maximum Ratings

Characteristic Symbol Rating Unit
LED Forward current IF 60 mA
Forward current derating (Ta 39°C) IF /°C -0.7 mA / °C
Peak forward current (100 s pulse, 100 pps) IFP 1 A
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Detector Collectoremitter voltage VCEO 55 V
Collectorbase voltage (TLP733) VCBO 80 V
Emittercollector voltage VECO 7 V
Emitterbase voltage (TLP733) VEBO 7 V
Collector current IC 50 mA
Power dissipation PC 150 mW
Power dissipation derating (Ta 25°C) PC / °C -1.5 mW / °C
Junction temperature Tj 125 °C
Storage temperature range Tstg -55-125 °C
Operating temperature range Topr -40-100 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation PT 250 mW
Total package power dissipation derating (Ta 25°C) PT / °C -2.5 mW / °C
Isolation voltage (AC, 1 min., R.H. 60%) BVS 4000 Vrms

TLP734 Features

· Collector−emitter voltage: 55 V (min.)
· Current transfer ratio: 50% (min.)
  Rank GB: 100% (min.)
· UL recognized: UL1577, file no. E67349
· BSI approved: BS EN60065: 1994
  Certificate no. 7364
  BS EN60950: 1992
  Certificate no. 7365
· SEMKO approved: SS4330784
  Certificate no. 9325163, 9522142
· Isolation voltage: 4000 Vrms (min.)
· Option (D4) type
  VDE approved: DIN VDE0884 / 06.92,
  Certificate no. 74286, 91808
  Maximum operating insulation voltage: 630, 890 VPK
  Highest permissible over voltage: 6000, 8000 VPK

TLP734 Connection Diagram

TLP734 Connection Diagram

TLP734 datasheet

TLP734
PDF/DataSheet Download

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